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MT5C1008 Datasheet Preview

MT5C1008 Datasheet

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

No Preview Available !

Austin Semiconductor, Inc.
SRAM
MT5C1008
128K x 8 SRAM
WITH DUAL CHIP ENABLE
AVAILABLE AS MILITARY
SPECIFICATIONS
•SMD 5962-89598
•MIL-STD-883
FEATURES
• High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power CMOS process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE1\, CE2, and OE\
options.
• All inputs and outputs are TTL compatible
OPTIONS
• Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
MARKING
-12 (contact factory)
-15
-20
-25
-35
-45
-55*
-70*
• Package(s)
Ceramic DIP (400 mil)
Ceramic DIP (600 mil)
Ceramic LCC
Ceramic LCC
Ceramic Flatpack
Ceramic SOJ
Ceramic SOJ
C No. 111
CW No. 112
EC No. 207
ECA No. 208
F No. 303
DCJ No. 501
SOJ No. 507
• 2V data retention/low power L
*Electrical characteristics identical to those provided for the 45ns
access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
PIN ASSIGNMENT
(Top View)
32-Pin DIP (C, CW)
32-Pin CSOJ (SOJ)
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 A15
30 CE2
29 WE\
28 A13
27 A8
26 A9
25 A11
24 OE\
23 A10
22 CE\
21 DQ8
20 DQ7
19 DQ6
18 DQ5
17 DQ4
32-Pin Flat Pack (F)
32-Pin LCC (EC)
32-Pin SOJ (DCJ)
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 A15
30 CE2
29 WE\
28 A13
27 A8
26 A9
25 A11
24 OE\
23 A10
22 CE\
21 DQ8
20 DQ7
19 DQ6
18 DQ5
17 DQ4
32-Pin LCC (ECA)
NC 1
A16 2
A14 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
DQ1 13
DQ2 14
DQ3 15
VSS 16
32 VCC
31 A15
30 CE2
29 WE\
28 A13
27 A8
26 A9
25 A11
24 OE\
23 A10
22 CE\
21 DQ8
20 DQ7
19 DQ6
18 DQ5
17 DQ4
4 3 2 1 32 31 30
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
5
6
7
8
9
10
11
12
13
29 WE\
28 A13
27 A8
26 A9
25 A11
24 OE \
23 A10
22 CE1\
21 DQ8
14 15 16 17 18 19 20
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power
CMOS designs using a four-transistor memory cell, and are
fabricated using double-layer metal, double-layer polysilicon
technology.
For design flexibility in high-speed memory
applications, this device offers dual chip enables (CE1\, CE2)
and output enable (OE\). These control pins can place the
outputs in High-Z for additional flexibility in system design.
All devices operate from a single +5V power supply and all
inputs and outputs are fully TTL compatible.
Writing to these devices is accomplished when write
enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.
Reading is accomplished when WE\ and CE2 remain HIGH and
CE1\ and OE\ go LOW. The devices offer a reduced power
standby mode when disabled, allowing system designs to
achieve low standby power requirements.
The “L” version offers a 2V data retention mode, re-
ducing current consumption to 1mA maximum.
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1




ASI

MT5C1008 Datasheet Preview

MT5C1008 Datasheet

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

No Preview Available !

Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC GND
SRAM
MT5C1008
A
A
A
A
A
A
A
A
A
(LSB)
1,048,576-BIT
MEMORY ARRAY
COLUMN DECODER
AAAAAAAA
(LSB)
POWER
DOWN
DQ8
DQ1
CE1\
CE2
OE\
WE\
NOTE: The two least significant row address bits (A8 and A6) are encoded using gray code.
TRUTH TABLE
MODE
OE\ CE1\ CE2 WE\
DQ POWER
STANDBY
X H X X HIGH-Z STANDBY
STANDBY
X X L X HIGH-Z STANDBY
READ
L L H H Q ACTIVE
READ
H L H H HIGH-Z ACTIVE
WRITE
X L H L D ACTIVE
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2


Part Number MT5C1008
Description 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
Maker ASI
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MT5C1008 Datasheet PDF






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