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MRF136
RF POWER FIELD-EFFECT TRANSISTOR
DESCRIPTION:
The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz.
MAXIMUM RATINGS
ID
2.5 A
VDSS
65 V
PDISS
50 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
3.6 °C/W
PACKAGE STYLE .380 4L FLG
1 = DRAIN 2 = GATE 3 & 4 = SOURCE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V(BR)DSS
ID = 5.0 mA
VGS = 0 V
IDSS
VDS = 28 V
VGS = 0 V
IGSS
VDS = 0 V
VGS = 40 V
VGS(th)
ID = 25 mA
VDS = 10 V
gfs
ID = 250 mA
VDS = 10 V
Ciss Coss Crss
VDS = 28 V
VGS = 0 V
f = 1.0 MHz
NF
VDS = 28 V
ID = 0.
MRF136 Datasheet
