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C1251 Datasheet Preview

C1251 Datasheet

NPN SILICON RF POWER TRANSISTOR

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2SC1251
NPN SILICON RF POWER TRANSISTOR
www.datasheet4u.com
DESCRIPTION:
The 2SC1251 is a Common Emitter
Device Designed for High Linearity
Class A Amplifiers up to 2.0 GHz.
FEATURES INCLUDE:
Direct Replacement for NE74020
High Gain - 10 dB min. @ 1.0 GHz
Gold Metalization
MAXIMUM RATINGS
IC 300 mA
VCB
PDISS
TJ
TSTG
θJC
45 V
5.3W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
33 OC/W
PACKAGE STYLE .204 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 10 mA
BVCBO
IC = 10 mA
BVEBO
IE = 1.0 mA
hFE
VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
25
45
3.0
20 200
UNITS
V
V
V
---
COB
VCB = 15 V
f = 1.0 MHz
3.0 pF
PG
P1dB
VCE = 15 V
IC = 100 mA
POUT = 0.5 W
f = 1000 MHz
13
+27
+29
dB
dBm
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/2




ASI

C1251 Datasheet Preview

C1251 Datasheet

NPN SILICON RF POWER TRANSISTOR

No Preview Available !

www.datasheet4u.com
TVU005B
FREQ.
MHz
100
200
300
400
500
600
700
800
900
1,000
S11
MAG. ANG.
0.735
0.840
0.860
0.857
0.855
0.850
0.850
0.850
0.855
0.860
190
188
181
178
173
170
168
165
163
161
S - PARAMETERS
VCE = 20 Volts, ID = 150 mA
S21
MAG. ANG.
S12
MAG. ANG.
13.65 115 0.025
8.15 100 0.025
5.75 90 0.025
4.25 80 0.030
3.50 70 0.035
2.80 66 0.035
2.45 60 0.040
2.20 55 0.045
2.00 50 0.050
1.75 45 0.055
30
30
30
30
35
35
35
40
45
45
S22
MAG. ANG.
0.364
0.275
0.280
0.285
0.300
0.310
0.320
0.330
0.340
0.350
280
240
240
230
225
220
215
210
215
215
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
2/2


Part Number C1251
Description NPN SILICON RF POWER TRANSISTOR
Maker ASI
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C1251 Datasheet PDF






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