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ASI

BFX34 Datasheet Preview

BFX34 Datasheet

NPN SILICON SWITCHING TRANSISTOR

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BFX34
NPN SILICON SWITCHING TRANSISTOR
DESCRIPTION:
The ASI BFX34 is Designed for
General Purpose Medium Power
Switching and Amplifier applications.
MAXIMUM RATINGS
IC 5.0 A
VCBO
120 V
VCEO
60 V
PDISS
5.0 W @ TA = 25 °C
TJ -65 to +200 °C
TSTG
-65 to +200 °C
θJC 35 °C/W
ELECTRICAL CHARACTERISTICS TA = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 100 mA
BVCBO
IC = 5.0 mA
BVEBO
IE = 1.0 mA
ICES VCE = 60 V
IEBO
VEB = 4.0 V
hFE
VCE(SAT)
VBE(SAT)
VCE = 2.0 V
VCE = 0.6 V
VCE = 2.0 V
IC = 5.0 A
IC = 5.0 A
IC = 1.0 A
IC = 2.0 A
IC = 2.0 A
IB = 500 mA
IB = 500 mA
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
MINIMUM
60
120
6.0
40
NONE
TYPICAL MAXIMUM
0.02
10
100
75
80 150
1.0
1.6
UNITS
V
V
V
µA
µA
---
V
V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/2




ASI

BFX34 Datasheet Preview

BFX34 Datasheet

NPN SILICON SWITCHING TRANSISTOR

No Preview Available !

B2NF5X13049
NONE
DYNAMIC ELECTRICAL CHARACTERISTICS TA = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM
ft
VCE = 5.0 V IC = 500 mA
f = 20 MHz
70
CEBO
CCBO
VEB = 0.5 V
VCB = 10 V
f =1.0 MHz
f =1.0 MHz
ton VCC = 20 V IC= 0.5 A IB1 = -IB2 = 500 mA
toff
TYPICAL
MAXIMUM
500
100
0.25
1.2
UNITS
MHz
pF
pF
µS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
2/2


Part Number BFX34
Description NPN SILICON SWITCHING TRANSISTOR
Maker ASI
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BFX34 Datasheet PDF






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