* High burnout resistance
* Low noise figure
* Hermetically sealed package MAXIMUM RATINGS IF 20 mA VR 1.0 V PDISS 2.0 (ERGS) @ TC = 25 °C TJ -55 °C to.

Operating From 2.0 to 4.0 GHz. FEATURES:
* High burnout resistance
* Low noise figure
* Hermetically sealed .

The ASI 1N831 is a Silicon Mixer Diode Designed for Applications Operating From 2.0 to 4.0 GHz. FEATURES:
* High burnout resistance
* Low noise figure
* Hermetically sealed package MAXIMUM RATINGS IF 20 mA VR 1.0 V PDISS 2.0 (ERGS) .

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