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AP Semiconductor

AD30D200 Datasheet Preview

AD30D200 Datasheet

200V 30A Ultra Low VF Schottky

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AD30D200
200V 30A Ultra Low VF Schottky
Characteristics Summary
Characteristics
Values
IF(AV)
15 X 2
VRRM
VF @ 15A, TJ = 25
TJ Operating Junction
Temperature
200
0.86
-65 to +175
Units
A
V
V, typ.
Features
Ultra Low Forward Voltage ( VF ) Drop
Very Low Reverse Leakage in high temperature.
Softest, fast switching capability
150Operating Junction Temperature
Lead Free Finish, RoHS Compliant
AD30D200F
TO-220F
PIN2
Case
PIN3
PIN1
Typical Applications
Device optimized for low forward voltage drop
to maximize efficiency in Power Supply applications.
· DC/DC Converters
· AC/DC Converters
www.apsemi.com
REV. 00
1




AP Semiconductor

AD30D200 Datasheet Preview

AD30D200 Datasheet

200V 30A Ultra Low VF Schottky

No Preview Available !

AD30D200
Maximum Ratings Characteristics
( TA = 25unless otherwise specified )
Parameter
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Average Rectified Forward Current Per device
(Rated VR-20Khz Square Wave) 50% duty cycle
Peak Forward Surge Current 1/2 60hz
Peak Repetitive Reverse Surge Current (2uS-1Khz)
Typical Thermal Resistance (per leg)
Package = TO-220F
Isolation voltage (TO-220F only)
Maximum Rate of Voltage Change ( at Rated VR)
Operating Junction Temperature
Storage Junction Temperature
Symbol
VRM
VRWM
VRRM
ID
IFSM
IRRM
RθJC
VAC
dv/dt
TJ
TSTG
Values
200
Units
V
V
V
15 A
250 A
1A
4 /W
1500
10000
-65 to +175
-65 to +175
V
V/uS
Electrical Characteristics (per leg)
( TA = 25unless otherwise specified )
Parameter
Test Conditions
IF = 5A
TJ = 25
Instantaneous
IF = 10A
TJ = 25
Forward Voltage
IF = 15 A
TJ = 25
TJ = 125
Instantaneous
Reverse Current
VR = 200 V
TJ = 25
TJ = 125
* Pulse width < 300 uS, Duty cycle < 2%
Symbol
VF*
IR*
Typ.
0.65
0.76
0.86
0.69
-----
-----
Max.
0.75
0.83
0.90
0.74
40
20
Units
V
uA
mA
www.apsemi.com
REV. 00
2


Part Number AD30D200
Description 200V 30A Ultra Low VF Schottky
Maker AP Semiconductor
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AD30D200 Datasheet PDF






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