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AP Semiconductor

AD2060T Datasheet Preview

AD2060T Datasheet

60V 20A Ultra Low VF Schottky

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AD2060T
60V 20A Ultra Low VF Schottky
Characteristics Summary
Characteristics
Values
IF(AV)
20
VRRM
VF @ 10A, TJ = 25
TJ, Operating Junction
Temperature
60
0.46
-40 to +150
Units
A
V
V, typ.
Features
AD2060T
TO-277
PIN3
PIN2
PIN1
Case
Ultra Low Forward Voltage ( VF ) Drop Low Power Losses
Low Leakage Current at high temperature.
Reliable application for various circumstances.
150Operating Junction Temperature
Lead Free Finish, RoHS Compliant
Typical Applications
Device optimized for low forward voltage drop to maximize efficiency in Power Supply
applications, high frequency converters, freewheeling diodes.
www.apsemi.com
REV. 01
1




AP Semiconductor

AD2060T Datasheet Preview

AD2060T Datasheet

60V 20A Ultra Low VF Schottky

No Preview Available !

Maximum Ratings Characteristics
( TA = 25unless otherwise specified )
Parameter
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Rated VR-20Khz Square Wave) 50% duty cycle
Peak Forward Surge Current 1/2 60hz
Peak Repetitive Reverse Surge Current (2uS-1Khz)
Typical Thermal Resistance
Maximum Rate of Voltage Change ( at Rated VR)
Operating Junction Temperature
Storage Junction Temperature
AD2060T
Symbol
VRM
VRWM
VRRM
ID
IFSM
IRRM
RθJC
dv/dt
TJ
TSTG
Values
60
Units
V
V
V
20 A
100
1
68
10000
-40 to +150
-40 to +150
A
A
/W
V/uS
Electrical Characteristics
( TA = 25unless otherwise specified )
Parameter
Test Conditions
Instantaneous
Forward Voltage
IF = 10 A
IF = 20 A
IF = 10 A
IF = 20 A
TJ = 25
TJ = 125
Instantaneous
Reverse Current
VR = 60V
VR = 60V
TJ = 25
TJ = 125
Junction Capacitance
VR = 5V, f = 1MHz
* Pulse width < 300 uS, Duty cycle < 2%
Symbol
VF*
IR*
CJ
Typ.
0.46
0.54
0.38
0.52
15
----
1120
Max.
0.48
0.57
0.42
0.56
40
25
----
Units
V
uA
mA
pF
www.apsemi.com
REV. 01
2


Part Number AD2060T
Description 60V 20A Ultra Low VF Schottky
Maker AP Semiconductor
Total Page 6 Pages
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