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AP80N03D - 30V N-Channel Enhancement Mode MOSFET

Description

The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS=30V ID =80A RDS(ON) < 6.5mΩ @ VGS=10V （Type：4.0mΩ）.

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Datasheet Details

Part number AP80N03D
Manufacturer APM
File Size 1.43 MB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP80N03D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =80A RDS(ON) < 6.5mΩ @ VGS=10V （Type：4.
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