FQP8N60 mosfet equivalent, 600v n-channel mosfet.
* 7.5A,600V,RDS(on)=1.0Ω@VGS=10V
* Low gate charge
* Low Crss (typical 23pF)
* Fast switching
* 100% AvalancheTested
* Improved dv/dt capability <.
This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for h.
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