10.0±0.3
* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain .

PACKAGE DIMENSIONS (in millimeter) FEATURES 10.0±0.3
* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 .

The 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES 10.0±0.3
* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0..

SSR-80DA-H

SSR-80AA

SSR-80AA-H

SSR-80LA

SSR-80LA-H

SSR-05AA

SSR-05DA

SSR-05DD

SSR-05DD-H

SSR-05LA

SSR-05VA

SSR-10AA

SSR-10AA-H

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