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PI3012A Datasheet

300DPI CIS Sensor Chip

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Peripheral
Imaging
Corporation
PI3012A
300DPI CIS Sensor Chip
Engineering Data Sheet
Description:
Peripheral Imaging Corporation PI3012A CIS sensor chip is a 300 dot per inch resolution
linear array image sensor chip which utilizes PIC’s proprietary CMOS Image Sensing
Technology. This image sensor is to be used for butting end-to-end on a printed circuit board
(PCB) using chip-on-board technology to form a scanning array with various lengths.
Applications for the sensor array are facsimile, scanner, check reader, and office automation
equipment.
Figure 1 is a block diagram of the sensor chip. Each sensor chip consists of 96 detector elements,
8080µm
1
23
4 ROW OF 96 SENSORS 93 94 95 96
AND VIDEO SIGNAL
LINE MULTIPLEXER
READOUT SHIFT REGISTER
380µm
BUFFER
SP
BUFFER
CP VDD DGND
CHIP
SELECT
IOUT
PI3012A SENSOR CHIP
FIGURE 1 BLOCK DIAGRAM
BUFFER
EOS
their associated multiplexing switches, buffers, and a chip selector. The detector element-to-element
spacing is approximately 84.6 µm. The size of each chip without scribe lines is 8080 µm by 380 µm.
Each sensor chip has 6 bonding pads. The pad symbols and functions are described in Table 1.
PAGE 1 of 7 PI3012A6, 6/9/99




AMI SEMICONDUCTOR

PI3012A Datasheet Preview

PI3012A Datasheet

300DPI CIS Sensor Chip

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SYMBOL
SP
CP
VDD
DGND
IOUT
EOS
FUNCTION
Start Pulse: Input to start the line scan.
Clock Pulse: Input to clock the Shift Register.
Positive Supply: +5 volt supply connected to substrate.
Digital Ground: Connection topside common.
Signal Current Output: Output for video signal current
End of Scan Pulse: Output from the shift register at end of scan.
Table 1. Pad Symbols and Functions
Bonding pad layout diagram:
8080 µm
SENSOR DIE
Y
SP W C B E
CP VDD GND
IOUT B1 W1
380µm
EOS
X
X
NOTE: ALL PAD OPENNINGS ARE 140 X 80 µm
EXCEPT FOR THE TEST PADS, WHICH ARE 80 X 80 µm.
PAD FUNCTION
Y
SP
CP
VDD
VSS
IOUT
EOS
START INPUT
30
CLOCK INPUT
30
+ 5 VOLT SUPPLY 30
GROUND
30
VIDEO SIGNAL OUT 30
SCAN OUTPUT 30
W TP
C TP
B TP
E TP
B1 TP
W1 TP
30
30
30
30
30
30
X
742.5
2767.0
3124.5
3419.0
5095.5
7000.1
1162.5
1312.5
1658.0
1807.0
5407.0
5672.0
NOTES:
1. THE DRAWING IS NOT TO SCALE.
2. THE DIE LENGTH AND WIDTH ARE
GIVEN AS SHOWN.
3. THE PAD LOCATIONS ARE GIVEN
IN THE TABLE.
4. THERE ARE TWO EXAMPLES OF
THE X AND Y LOCATIONS SHOWN
ON THE FIRST TWO PADS. THEY
ARE MEASURED TO THE LEFT BOTTOM
CORNER OF THE PAD OPENNING.
5. ALL DIMENSIONS ARE IN µm.
6. TP ARE TEST POINTS, THEY ARE
NOT TO BE BONDED OUT.
FIGURE 2. PI3012A PAD LAYOUT AND DIE SIZE.
Figure 2 shows the bonding pad locations for PI3012A Sensor Chip relative to the lower left corner of the die.
the die.
Electro-Optical Characteristics (25o C)
Table 2, below, lists the electro-optical characteristics of PI3012A sensor chip at 25o C.
PAGE 2 OF 7 PI3012A, 6/9/99


Part Number PI3012A
Description 300DPI CIS Sensor Chip
Maker AMI SEMICONDUCTOR
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