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N08M1618L1A Datasheet, AMI SEMICONDUCTOR

N08M1618L1A bit equivalent, 8mb ultra-low power asynchronous medical cmos sram 512k x 16 bit.

N08M1618L1A Avg. rating / M : 1.0 rating-17

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N08M1618L1A Datasheet

Features and benefits


* Dual voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.4 to 2.2 Volts
* Very low standby current 0.5µA at 1.8V and 37 deg C
* Very low operat.

Application

This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AM.

Description

3 A0 A3 A5 A17 NC A14 A12 A9 2 OE UB I/O10 I/O11 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS VCCQ NC Pin Function Address Inputs.

Image gallery

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TAGS

N08M1618L1A
8Mb
Ultra-Low
Power
Asynchronous
Medical
CMOS
SRAM
512K
bit
AMI SEMICONDUCTOR

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