SSCP005GN3 datasheet, bjt equivalent, AFSEMI

Features and benefits

PNP BJT VCE -40v VBE -6v Vcesat typ -150mv Ic -3A
* Applications
* battery powered circuits
* low in-line power dissipation circuits
* Pin configura.

Application

* battery powered circuits
* low in-line power dissipation circuits
* Pin configuration
* General Desc.

Description

This device is produced with advanced high carrier density technology, which is especially used to minimize saturation voltage drop. This device particularly suits low voltage applications such as portable equipment, power management and other batter.

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