SSC8037GT8 mosfet equivalent, p-channel enhancement mode mosfet.
VDS -30V
VGS ±20V
RDSon TYP 27mR@-10V 39mR@-4V5
ID -8A
* Applications
* Load Switch
* DCDC conversion
* NB battery
* Pin Configuration
* Gen.
* Load Switch
* DCDC conversion
* NB battery
* Pin Configuration
* General Description
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T.
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This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage power management requiring a wild range
of given volta.
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