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AFSEMI

SSC8029GN2 Datasheet Preview

SSC8029GN2 Datasheet

P-Channel Enhancement Mode MOSFET

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SSC8029GN2
P-Channel Enhancement Mode MOSFET
Features
VDS
-20V
VGS
±12V
RDSon TYP
21mR@-4V5
26mR@-2V5
35mR@-1V8
45mR@-1V5
ID
-6.5A
Applications
Load Switch
Portable Devices
DCDC conversion
Charging
Driver for Relay,Solenoid,Motor,LED etc.
General Description
This device is produced with high cell density DMOS
trench technology, Uses advanced trench technology and
design to provide excellent RDS (ON) with low gate
charge. This device particularly suits low voltage
applications such as portable equipment, power
management and other battery powered circuits, and low
in-line power dissipation are needed in a very small outline
surface mount package. Excellent thermal and electrical
capabilities.
Pin Configuration
Top View
D: Drain; G: Gate; S: Source
Package Information
SSC-1V0
http://www.afsemi.com
1/5
Analog Future




AFSEMI

SSC8029GN2 Datasheet Preview

SSC8029GN2 Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

SSC8029GN2
Absolute Maximum Ratings @TA=25unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current (Continuous) 1
Power Dissipation 1
25
100
25
100
ID25
ID70
PD25
PD70
Drain Current (Pulse)
IDM
Operating Temperature/ Storage Temperature
TJ//TSTG
10S Steady State
-20
±12
-6.5 -5.6
-5.2 -4.4
2.8 1.4
1.2 0.9
-24
-55~150
Unit
V
V
A
W
A
Electrical Characteristics @TA=25unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID=-250uA
-20 --
Drain Cut-off Current
IDSS
VDS = -20 V , VGS = 0V
-- --
Gate-Source Leakage Current
IGSS
VGS =±12 V , VDS = 0V
-- --
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th )
ID = -250 uA , VDS = VGS
-0.45 -0.55
VGS = -4.5V ,ID = -5.5A
-- 21
Drain-Source On-state Resistance
RDS(on)
VGS = -2.5V ,ID = -2.5A
VGS = -4.5V ,ID = -1.8A
26
35
VGS = -2.5V , ID = -1.5A
-- 45
Forward Transconductance
gFS
VDS = -5V, ID = -5.5A
-- 23
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Feedback Capacitance
Ciss -- 1970
VDS = -10V , VGS = 0V
Coss
-- 205
f = 1 MHz
Crss -- 195
SWITCHING CHARACTERISTICS
Turn-on Delay Time
td ( on )
VDD = -10V , ID = -6.5A, VGS =
--
16
Turn-off Delay Time
td( off )
-4.5V, RG = 6R
-- 78
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
Is = -1 A, VGS = 0V
-0.75
Max
--
-1
±100
-0.80
29
39
60
90
--
--
--
--
-1.5
Unit
V
uA
nA
V
mR
mR
mR
mR
S
pF
pF
pF
ns
ns
V
Notes:
1. Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
2. Pulse width ≤380us, duty cycle≤2%
SSC-1V0
http://www.afsemi.com
2/5
Analog Future


Part Number SSC8029GN2
Description P-Channel Enhancement Mode MOSFET
Maker AFSEMI
Total Page 5 Pages
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