Datasheet4U Logo Datasheet4U.com

SSC8029GN2 - P-Channel Enhancement Mode MOSFET

Description

This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

Features

  • s VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A.

📥 Download Datasheet

Datasheet Details

Part number SSC8029GN2
Manufacturer AFSEMI
File Size 605.65 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8029GN2 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSC8033GS3 P-Channel Enhancement Mode MOSFET SPIRIT-SEMI
SSC8035GS6 P-Channel MOSFET VBsemi
SSC-AM101 CHIP LED DEVICE Seoul Semiconductor
SSC-AWT722 TOP LED DEVICE Seoul Semiconductor
SSC-CMX2 Clip Addressable Output Module Firesense

Other Datasheets by AFSEMI

Part Number Description
SSC8029GS6A P-Channel Enhancement Mode MOSFET
SSC8020GS6 N-Channel Enhancement Mode MOSFET
SSC8020GS8 N-Channel Enhancement Mode MOSFET
SSC8020GS9 N-Channel Enhancement Mode MOSFET
SSC8022GS6 N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSC8029GN2 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A  Applications  Load Switch  Portable Devices  DCDC conversion  Charging  Driver for Relay,Solenoid,Motor,LED etc.   General Description This device is produced with high cell density DMOS trench technology, Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
Published: |