ADM57N10 mosfet equivalent, n-channel mosfet.
* Low Gate Charge for Fast Switching Application
* Low RDS(ON) to Minimize Conductive Loss
* 100% EAS Guaranteed
* Optimized V(BR)DSS Ruggedness
* Le.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Sourc.
The ADM57N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common.
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