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ADM2P06W - P-Channel MOSFET

ADM2P06W Description

                        ADV     ADM2P06W  P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -60V ID -2.3A RDS(.
The ADM2P06W is the high cell density trenchedP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and l.

ADM2P06W Features

* Excellent Cdv/dt effect decline
* Super Low Gate Charge
* 100% EAS Guaranteed
* Advanced Trench technology

ADM2P06W Applications

* The ADM2P06W meets the RoHS and Green Product requirement with full function reliability approved. Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS St

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Datasheet Details

Part number
ADM2P06W
Manufacturer
ADV
File Size
778.34 KB
Datasheet
ADM2P06W-ADV.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET ADV
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