Full PDF Text Transcription for ADM20N06E (Reference)
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ADM20N06E. For precise diagrams, and layout, please refer to the original PDF.
ADV ADM20N06E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 22A RDS(ON) (mΩ) 55mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unle...
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(ON) (mΩ) 55mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current PD Maximum Power Dissipation 1. Pulse width limited by maximum junction temperature.
ADM20N06E Datasheet
