ADM20N06E
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS 60V
ID 22A
RDS(ON) (mΩ) 55mΩ
TO252
1 2 3
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter mon Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
Maximum Junction Temperature
TSTG
Storage Temperature Range
Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
300μs Pulse Drain Current Tested⑴
Continuous Drain Current
Maximum Power Dissipation
1. Pulse width limited by maximum junction temperature.
TC=25°C TC=25°C TC=70°C TC=25°C TC=70°C
Thermal Characteristics
Symbol
Parameter
Rth JC Rth JA
Thermal resistance junction-case max Thermal resistance junction-ambient max
Ratings
60 ±20 150 -55 to 150
80 22 18 50...
