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ADM200N06 - N-Channel MOSFET

Description

The AM200N06 series MOSFETs is a new technology, which combines an innovative super junction technology and advance process.

This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.

Features

  • Low gate input resistance.
  • High dv/dt and avalanche capabilities.
  • 100% EAS Guaranteed.
  • Advanced high cell density Trench technology.
  • Lead-Free,RoHS Compliant 1  2  3 .

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Datasheet preview – ADM200N06

Datasheet Details

Part number ADM200N06
Manufacturer ADV
File Size 674.41 KB
Description N-Channel MOSFET
Datasheet download datasheet ADM200N06 Datasheet
Additional preview pages of the ADM200N06 datasheet.

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Full PDF Text Transcription

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                        ADV     ADM200N06  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 198A RDS(ON) (mΩ) 3.8mΩ TO220C Features: ● Low gate input resistance ● High dv/dt and avalanche capabilities ●100% EAS Guaranteed ● Advanced high cell density Trench technology ● Lead-Free,RoHS Compliant 1  2  3  Description: The AM200N06 series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
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