ADM200N06 - N-Channel MOSFET

Description

The AM200N06 series MOSFETs is a new technology, which combines an innovative super junction technology and advance process.

This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.

Features

Low gate input resistance.
High dv/dt and avalanche capabilities.
100% EAS Guaranteed.
Advanced high cell density Trench technology.
Lead-Free,RoHS Compliant 1 2 3 .

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ADM200N06 n-channel mosfet by ADV - Datasheet Preview

Datasheet Details

Part number	ADM200N06
Manufacturer	ADV
File Size	674.41 KB
Description	N-Channel MOSFET
Datasheet	ADM200N06 Datasheet

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ADM200N04	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADV ADM200N06 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 198A RDS(ON) (mΩ) 3.8mΩ TO220C Features: ● Low gate input resistance ● High dv/dt and avalanche capabilities ●100% EAS Guaranteed ● Advanced high cell density Trench technology ● Lead-Free,RoHS Compliant 1 2 3 Description: The AM200N06 series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.

Published: Sep 11, 2018 |