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ADM200N06 Datasheet N-Channel MOSFET

Manufacturer: ADV

Datasheet Details

Part number ADM200N06
Manufacturer ADV
File Size 674.41 KB
Description N-Channel MOSFET
Download ADM200N06 Download (PDF)

General Description

: The AM200N06 series MOSFETs is a new technology, which combines an innovative super junction technology and advance process.

This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.

Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current(1,6) TC =25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested(2

Overview

                        ADV     ADM200N06  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 198A RDS(ON) (mΩ) 3.

Key Features

  • Low gate input resistance.
  • High dv/dt and avalanche capabilities.
  • 100% EAS Guaranteed.
  • Advanced high cell density Trench technology.
  • Lead-Free,RoHS Compliant 1  2  3 .