ADM100N10 mosfet equivalent, n-channel mosfet.
* Special process technology for high ESD capability
* High density cell design for ultra low RDS(ON)
* 100% EAS Guaranteed
* Optimized V(BR)DSS Ruggedne.
RDS(ON) with low gate
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Rat.
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