ADM100N10 datasheet, mosfet equivalent, ADV

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datasheet Download (Size : 0.99MB)

Features and benefits

* Special process technology for high ESD capability
* High density cell design for ultra low RDS(ON)
* 100% EAS Guaranteed
* Optimized V(BR)DSS Ruggedne.

Application

RDS(ON) with low gate Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Rat.

Description

The ADM100N10 uses advanced trench technology and design to provide excellent charge.lt can be used in a wide variety of applications. RDS(ON) with low gate Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Commo.

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