ACE4953B transistor equivalent, dual p-channel enhancement mode field effect transistor.
* VDS(V)=-20V
* ID=-5.5A (VGS=-10V)
* RDS(ON)<55mΩ (VGS=-10V)
* RDS(ON)<58mΩ (VGS=-4.5V)
* RDS(ON)<80mΩ (VGS=-2.5V)
Absolute Maximum Ratings
Paramet.
Features
* VDS(V)=-20V
* ID=-5.5A (VGS=-10V)
* RDS(ON)<55mΩ (VGS=-10V)
* RDS(ON)<58mΩ (VGS=-4.5V)
.
The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
* VDS(V)=-20V
* ID=-5.5A (VGS=-10V)
* RDS(ON)<55m.
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