ACE3401 Datasheet, ACE Technology

*
*
*
*
*
*
*
*
*
*
*
* -30V/-4.0A, RDS(ON)=55mΩ@VGS=-10V -30V/-3.2A, RDS(ON)=65mΩ@VGS=-4.5V -30V/-1.2A, RDS(ON)=75mΩ@VG.

P-Channel Enhancement Mode MOSFET The ACE3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state.