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ACE2600B - Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch.

It is ESD protected.

Key Features

  • VDS(V)=20V.
  • ID=6A (VGS=4.5V).
  • RDS(ON)＜22mΩ (VGS=4.5V).
  • RDS(ON)＜26mΩ (VGS=2.5V).
  • RDS(ON)＜34mΩ (VGS=1.8V).
  • ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous).
  • AC TA=25 OC TA=70 OC VDSS VGSS ID 20 V ±8 V 6 4.8 A Drain Current (Pulse).
  • B IDM 30 Power Dissipation TA=25 OC TA=70 OC PD 1.3 W 0.8 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Pack.

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Datasheet Details

Part number ACE2600B
Manufacturer ACE Technology
File Size 446.47 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet ACE2600B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD protected. Features  VDS(V)=20V  ID=6A (VGS=4.5V)  RDS(ON)＜22mΩ (VGS=4.5V)  RDS(ON)＜26mΩ (VGS=2.5V)  RDS(ON)＜34mΩ (VGS=1.8V)  ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) * AC TA=25 OC TA=70 OC VDSS VGSS ID 20 V ±8 V 6 4.8 A Drain Current (Pulse) * B IDM 30 Power Dissipation TA=25 OC TA=70 OC PD 1.3 W 0.