ACE2600B transistor equivalent, dual n-channel enhancement mode field effect transistor.
* VDS(V)=20V
* ID=6A (VGS=4.5V)
* RDS(ON)＜22mΩ (VGS=4.5V)
* RDS(ON)＜26mΩ (VGS=2.5V)
* RDS(ON)＜34mΩ (VGS=1.8V)
* ESD Protected: 2000V
Absolute Max.
The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD protected.
Features
* VDS(V)=20V
* ID=6A .
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