ACE2010M - P-Channel MOSFET

ACE Technology

ACE2010M Datasheet Preview — Preview of ACE2010M PDF

Datasheet Details

Part number	ACE2010M
Manufacturer	ACE Technology
File Size	300.16 KB
Description	P-Channel MOSFET
Datasheet	ACE2010M-ACETechnology.pdf

ACE2010M Product details

Description

The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.

Features

Low rDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b TC=25°C Continuous Source Current (Diode Conduction) a Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Symbol VDS VG.

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Published: Apr 18, 2016 |