Datasheet Details
| Part number | ACE2010M |
|---|---|
| Manufacturer | ACE Technology |
| File Size | 300.16 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 ACE2010M Datasheet
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General Description
The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Key Features
- Low rDS(on) provides higher efficiency and extends battery life.
- Low thermal impedance copper leadframe DPAK saves board space.
- Fast switching speed.
- High performance trench technology Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b TC=25°C Continuous Source Current (Diode Conduction) a Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Symbol VDS VG.