* N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V 20V/0.65A,RDS(ON)=1000mΩ@VGS=1.5V
* Super high dens.

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

The ACE1551A is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switchi.

ACE1501

ACE1502

ACE150x

ACE1512E

ACE1522B

ACE1526B

ACE1001

ACE1020M

ACE1085

ACE1101

ACE1117

ACE1202

ACE125RUW48

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