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VDSM ITAVM ITRMS ITSM VT0 rT
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= = = = = =
2800 V 3740 A 5880 A 60000 A 0.95 V 0.100 mΩ
Phase Control Thyristor
5STP 33L2800
Doc. No. 5SYA1011-03 Sep. 01
Patented free-floating silicon technology Low on-state and switching losses for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate
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Blocking
Part Number VDRM VRSM1 IDRM IRRM dV/dtcrit VRRM 5STP 33L2800 5STP 33L2600 5STP 33L2200 Conditions 2800 V 3000 V 2600 V 2800 V ≤ 400 mA ≤ 400 mA 1000 V/µs 2200 V 2400 V f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDRM VRRM Tj = 125°C
Exp. to 0.67 x VDRM, Tj = 125°C
Mechanical data
FM Mounting force nom. min. max.