| Description | The UTC UTT50N06M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC UTT50N06M is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits. FEATURES * RDS(ON) ≤ 12 mΩ @ VGS=10V, ID=25A RDS(ON) ≤ 15 mΩ @ VGS=4.5V, ID=20A * High ... |
| Features |
* RDS(ON) ≤ 12 mΩ @ VGS=10V, ID=25A RDS(ON) ≤ 15 mΩ @ VGS=4.5V, ID=20A
* High Cell Density Trench Technology * High Power and Current Handling Capability
SYMBOL www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 9 QW-R209-223.J UTT50N06M Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free Pack... |
| Datasheet |
 UTT50N06M Datasheet - 677.89KB |
