| Description | It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VG... |
| Features |
and Benefits:
TO-251
Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSF5N60G Marking and pin Assignment Schematic diagram Description: It utilizes the latest p... |
| Datasheet |
 SSF5N60G Datasheet - 464.45KB |
