| Description | The SVF12N65RF(FJH) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wi... |
| Features |
12A, 650V, RDS(on)(typ.)= 0.64@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
2
1 3
1.Gate 2.Drain 3.Source
1 23
1 23
TO-220FJH-3L
TO-220F-3L
NOMENCLATURE
Silan VDMOS Code of F-Cell process
SVF XNXXRX
Package information. Example: FJH: TO-220FJH;
F:TO-220F
Version
Nominal current, using 1 or 2 digits. ...
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| Datasheet |
 SVF12N65RFJH Datasheet - 285.88KB |
