| Description | DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) Low Power DRAMs Pin Names A0-A12 A0-A11 RAS OE I/O1-I/O4 CAS WE Vcc Vss Address Inputs for 8k-refr... |
| Features |
8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164400AJ/AT) 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165400AJ/AT) • 256 msec refresh period for L-versions • • Plastic Package P-SOJ-32-1 400 mil P-TSOPII-32-1 400 mil HYB 3164(5)400AJ HYB 3164(5)400AT Semiconductor Group 1 6.97 HYB3164(5)400AJ/AT(L)-40/-50/-60 16M x 4-DRAM... |
| Datasheet |
 HYB3165400AJ-50 Datasheet - 246.74KB |
