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K9LAG08U1A Samsung FLASH MEMORY

Description Offered in 1Gx8bit, the K9G8G08X0A is a 8G-bit NAND Flash Memory with spare 256M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the d...
Features
• Voltage Supply - 2.7V Device(K9G8G08B0A) : 2.5V ~ 2.9V - 3.3V Device(K9G8G08U0A) : 2.7V ~ 3.6V
• Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x8bit
• Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte
• Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(...

Datasheet PDF File K9LAG08U1A Datasheet - 1.17MB

K9LAG08U1A  






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