| Description | www.DataSheet4U.com STM8020 SamHop Microelectronics Corp. Mar. 30 2007 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 35V F E AT UR E S ( m Ω ) Max ID 12A RDS(ON) S uper high dense cell design for low R DS (ON ). R ugged and reliable. S urface Mount P ackage. E S D P rotected. 9 @ VGS = 10V 13 @ VGS = 4.5V SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwis... |
| Features |
) gFS CISS COSS CRSS
c
Condition
VGS =0V, ID = 250uA VDS=28V, VGS = 0V VGS = 20V, VDS =0V VDS = VGS, ID = 250uA VGS= 10V, ID = 10A VGS = 4.5V, ID = 6A VDS = 10V, VGS = 10V VDS = 10V, ID =10A
Min Typ C Max Unit
35 1 10 1 1.4 7.2 9.5 20 25 1400 3 9 V uA uA V
m ohm
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current G...
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| Datasheet |
 STM8020 Datasheet - 232.55KB |
