| Description | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order code STW58N65DM2AG Table 1: Device summary Marking 58N65DM2 Package TO-247 ... |
| Features |
Order code STW58N65DM2AG
VDS 650 V
RDS(on) max. 0.065 Ω
ID 48 A
PTOT 360 W
Designed for automotive applications and AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applicati... |
| Datasheet |
 STW58N65DM2AG Datasheet - 265.06KB |
