Description | This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. SO-8 INTERNAL SCHE... |
Features |
ontinuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Operating Junction Temperature
Value 150 150 ± 20 5 3 20 2.5 0.02 -55 to 150
Unit V V V A A A W W/°C °C
( •) Pulse width limited by safe operating area. 1/8 STS5NS150 THERMAL DATA Rthj-amb (*)Thermal Resistance Junction-ambient Ma... |
Datasheet | STS5NS150 Datasheet - 277.79KB |