logo

STRH80P6FSY3 STMicroelectronics (https://www.st.com/) P-channel 60V - 0.021 Ohm - TO-254AA Rad-hard low gate charge STripFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters. It is also intended for any application with low gate charge drive requirements. Application ■ ■ Satellite High reliability Order codes P...
Features www.DataSheet4U.com Type STRH80P6FSY3 VDSS 60V










■ Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm²/mg LET ions TO-254AA Internal schematic diagram ...

Datasheet PDF File STRH80P6FSY3 Datasheet - 335.89KB

STRH80P6FSY3  






logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map