| Description | This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing Internal reproducibility. The resulting transistor shows extremely high packing density for low on- DataSheet4U.com resistance, rugged avalanche characteristics and low gate charge. s... |
| Features |
Type STD60N55 STD60N55-1
■ ■ VDSS 55V 55V RDS(on) <10.5mΩ <10.5mΩ ID 65A 65A Pw 110W 110W 3 1 Standard threshold drive 100% avalanche tested DPAK 3 2 1 IPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment step... |
| Datasheet |
 STD60N55-1 Datasheet - 426.96KB |
