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RUH3051L Ruichips N-Channel Advanced Power MOSFET

Description D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation ...
Features
• 30V/50A RDS (ON) =4.8mΩ(Typ.)@VGS=10V RDS (ON) =6.8mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• Fast Switching Speed
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant) Applications
• DC/DC Converters
• On board power for server
• Synchronous rectification Pin Description D G S TO252 D...

Datasheet PDF File RUH3051L Datasheet - 623.89KB

RUH3051L  






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