| Description | These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 1.0Ω ID = 7.5A 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.3Ω) ● Low Gate Charge(Typical Data:24nC) ● Low Rever... |
| Features |
● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.3Ω) ● Low Gate Charge(Typical Data:24nC) ● Low Reverse Transfer Capacitances(Typical:5.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circui... |
| Datasheet |
 E8NE60 Datasheet - 1.34MB |
