| Part Number | RCR1525SI |
| Manufacturer | RCR |
| Title | P-Channel Enhancement Mode Field Effect Transistor |
| Description | This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-s... |
| Features |
VDS (V) = -30 V ID = -3.5 A RDS(ON) = 75mΩ @VGS = -10V RDS(ON) = 90mΩ @VGS = -4.5V High density cell design for low RDS(ON).
z General Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology...
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| Datasheet |
 RCR1525SI Datasheet 85.96KB |
