| Description | The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. .380 (9.64) MAX .012 (.30) .007 (.20) .055 (1.40) .047 (1.20) 4 3 .270 (6.86) .248 (6.30) .327 (8.30) MAX .300 (7.62) MIN The H11A817 Series consists of a gallium arsenide infrared emitting di... |
| Features |
0 to 15°
s s
.200 (5.10) MAX .158 (4.01) .144 (3.68) .020 (.51) MIN .154 (3.90) .120 (3.05)
Compact 4-pin package Current transfer ratio in selected groups:
H11AA814: 20-300% H11AA814A: 50-150% H11A817: H11A817A: H11A817B: H11A817C: H11A817D: 50-600% 80-160% 130-260% 200-400% 300-600%
.022 (.56) .015 (.40) .100 (2.54) TYP
APPLICATIONS
1 4 COLLE...
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| Datasheet |
 H11A817B Datasheet - 30.01KB |
