| Part Number | PMDXB950UPE |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | dual P-channel Trench MOSFET |
| Description | Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic ... |
| Features |
and benefits
• • • • • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state ... |
| Datasheet |
 PMDXB950UPE Datasheet 274.18KB |
