| Description | The NCE40H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V ,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent ... |
| Features |
● VDS =40V ,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching applicat... |
| Datasheet |
 NCE40H21C Datasheet - 440.46KB |
