Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZTA92T1/D High Voltage Transistor PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 PZTA92T1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEB... |
Features |
E = 0) Emitter –Base Breakdown Voltage (IE = –100 µAdc, IC = 0) Collector –Base Cutoff Current (VCB = – 200 Vdc, IE = 0) Emitter –Base Cutoff Current (VBE = – 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO – 300 – 300 – 5.0 — — — — — – 0.25 – 0.1 Vdc Vdc Vdc µAdc µAdc ON CHARACTERISTICS DC Current Gain(2) (IC = – 1.0 mAdc, VCE = – 10 Vdc) (IC ... |
Datasheet | PZTA92T1 Datasheet - 76.26KB |