Part Number | MTB40N10E |
Manufacturer | Motorola |
Title | TMOS POWER FET |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB40N10E/D Advance Data Sheet TMOS E-FET.™ Power Field Effect Transistor N–Chann... |
Features |
418B –03, Style 2 D2PAK G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Continuous Gate –to –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current ... |
Datasheet | MTB40N10E Datasheet 192.96KB |