| Description | The device 6ED family – 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage... |
| Features |
Infineon thin-film-SOI-technology Maximum blocking voltage +600 V Output source/sink current +0.165 A/-0.375 A Integrated ultra-fast, low RDS(ON) Bootstrap Diode Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology Separate control circuits for all six drivers Detection of over current a... |
| Datasheet |
 6EDL04N02PR Datasheet - 1.12MB |
