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RCJ200N20 INCHANGE N-Channel MOSFET

Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 106 W TJ Max. Operating Junction Temperature 150 ℃ Tstg ...
Features
·Drain Current
  –ID= 20A@ TC=25℃
·Drain Source Voltage- : VDSS=200V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM ...

Datasheet PDF File RCJ200N20 Datasheet - 249.87KB

RCJ200N20  






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