Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current: ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power switching applications ·Hard switched and high frequency circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)... |
Features |
·Drain Current: ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power switching applications ·Hard switched and high frequency circuits ·ABSOLUTE MAXIMUM RATINGS(... |
Datasheet | 80N08A Datasheet - 214.52KB |