logo

G2314 GTM N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description *Capable of 2.5V gate drive *Low on-resistance Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, [email protected] Continuous Drain Curre...
Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, [email protected] Continuous Drain Current3, VGS...

Datasheet PDF File G2314 Datasheet - 390.16KB

G2314  






logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map