| Description | QFET N-CHANNEL FQP1N60 FEATURES BVDSS = 600V • • • • • • • • Advanced New Design Avalanche Rugged Technology Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 5.0nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 9.3Ω (Typ.) 1 2 3 RDS(ON) = 11.5Ω ID = 1.2A TO-220 1. Gate 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS Symb... |
| Features |
BVDSS = 600V • • • • • • • • Advanced New Design Avalanche Rugged Technology Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 5.0nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 9.3Ω (Typ.) 1 2 3 RDS(ON) = 11.5Ω ID = 1.2A TO-220 1. Gate 2. Drain 3. Source ABSOLUTE MAXI... |
| Datasheet |
 FQP1N60 Datasheet - 519.41KB |
