| Description | These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low v... |
| Features |
2.8 A, 60 V. RDS(ON) = 0.2 Ω @ VGS = 4.5 V RDS(ON) = 0.16 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
_________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol VDSS...
|
| Datasheet |
 NDT014L Datasheet - 229.66KB |
